Open AccessNumerical simulation of RESET operation for multilevel storage in phase change memory cell
Author(s) -
Xie Zi-Jian,
Hu Zuo-Qi,
Yuhui Wang,
Zongben Xu
Publication year - 2012
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.61.100201
Subject(s) - phase change memory , reset (finance) , computer data storage , thermal conduction , phase change material , computer simulation , materials science , phase change , computer science , simulation , layer (electronics) , thermodynamics , physics , nanotechnology , composite material , financial economics , economics , operating system
The REST operation for multilevel storage in phase change random access memory cell is investigated via numerical simulation. A three-dimensional memory cell model is built, and the physical property variation is calculated by solving the Laplace equation and the heat conduction equation with finite element method. The phase distribution in phase change layer and the total resistance of the cell are examined. The influences of cell structure size variation on multilevel storage process and states are analyzed. The simulation results demonstrate that multilevel storage can be achieved through accurate electrical pulse control while the variations of phase change layer thickness and bottom electrode contact size have relatively large effect on the storage state. The storage states can all keep stable for more than 10 years at 80 ℃.