Open AccessAnalytical dispersion relation model for conduction band of uniaxial strained Si
Author(s) -
Guanyu Wang,
Jianjun Song,
Heming Zhang,
Huiyong Hu,
Jianli Ma,
Xiaoyan Wang
Publication year - 2012
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.61.097103
Subject(s) - materials science , dispersion relation , condensed matter physics , electronic band structure , dispersion (optics) , coupling (piping) , band gap , thermal conduction , stress (linguistics) , optics , physics , optoelectronics , composite material , linguistics , philosophy
In this paper, based on the framework of kp method, the influence of uniaxial stress on the conduction band energy-band structure of bulk-Si is analysed first, the coupling of 1 and 2 bands at the X point, and the influence of that band-band coupling on the minimum of energy valley are then separately discussed under the action of shear strain. On that basis, the dispersion relation close to the minimum is obtained. Furthermore, the different valley orientations need to be taken into account. Using the coordinate transformation, the modelling for dispersion relation of each valley with arbitrary uniaxial stress is finally achieved. The proposed analytical model in this paper is also suited to the understanding of the physical properties of uniaxial strained Si material and may provide some references for the study on bandstructure and electrical properties of the inversion layer in uniaxial strained Si nMOSFETs.