Open AccessStudy of the effect of lithography deviation on 4H-SiC floating junction junction barrier Schottky diode
Author(s) -
Xiaoyan Tang,
Dai Xiao-Wei,
Yuming Zhang,
Yimen Zhang
Publication year - 2012
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.61.088501
Subject(s) - materials science , dislocation , electrical junction , schottky diode , breakdown voltage , schottky barrier , lithography , optoelectronics , diode , equivalent series resistance , voltage , metal–semiconductor junction , electrical engineering , composite material , engineering
The breakdown voltage of 4H-SiC junction barrier schottky diode with floating junction is larger than that of traditional junction barrier Schottky diode under the condition of the same fixed on-resistance. It is a crucial technology that the alignment of lithography between p+ region of floating junction and main junction. The simulation results obtained using two-dimensional simulator ISE show that the breakdown voltage obviously drops with the deviation of lithography increasing. Although the breakdown characteristics of the dislocation and the alignment structure are similar, the series resistance of the dislocation structure is larger than the latter when the forward voltage is larger than 2 V.