The mechanism of negative magnetoresistance in nondegenerate p-type Hg1-xMnxTe (x0.17) monocrystal | Zendy

Zhu Liang-Qing | Zendy; Lin Tie | Zendy; Guo Shao-Ling | Zendy; Chu Jun-Hao | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

The mechanism of negative magnetoresistance in nondegenerate p-type Hg1-xMnxTe (x0.17) monocrystal

Author(s) -

Zhu Liang-Qing,

Lin Tie,

Guo Shao-Ling,

Chu Jun-Hao

Publication year - 2012

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.61.087501

Subject(s) - magnetoresistance , condensed matter physics , energy level splitting , paramagnetism , magnetic semiconductor , impurity , semiconductor , acceptor , magnetic field , physics , ion , materials science , doping , quantum mechanics

It is important to study the mechanism of negative magnetoresistance (MR) in magnetic semiconductors for the correct understanding of the sp-d interactions between carriers and magnetic ions. In this work, temperature-dependent Hall effect (10300 K) and magnetic susceptibility (5300 K) are measured for the study of negative MR and paramagnetic enhancement of nondegenerate p-type Hg1-xMnxTe (x0.17) monocrystal. As temperature decreases, both negative MR and susceptibility show the same behaviors, each of which contains an exponentially changing temperature function \exp(-K/T). According to the theory of impurity energy level in semimagnetic semiconductor, magnetic field can lead to the spin-splitting of acceptor level and result in reducing the binding energy of acceptors, which is responsible mainly for the negative MR in nondegenerate p-type Hg1-xMnxTe monocrystal.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research