Open AccessAnalytical modeling of asymmetric HALO-doped surrounding-gate MOSFET with gate overlapped lightly-doped drain
Author(s) -
Cong Li,
Yiqi Zhang,
Han Ru,
Zhang Li,
Junlin Bao
Publication year - 2012
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.61.078504
Subject(s) - subthreshold conduction , doping , subthreshold slope , mosfet , halo , work function , materials science , optoelectronics , current (fluid) , threshold voltage , metal gate , voltage , condensed matter physics , gate oxide , nanotechnology , physics , transistor , quantum mechanics , layer (electronics) , galaxy , thermodynamics
A novel asymmetric HALO-doped surrounding-gate MOSFET with gate overlapped lightly-doped drain is presented. The performance of the new structure is studied by developing physics-based analytical models for surface potential, threshold voltage, and subthreshold current. It is found that the new structure can effectively suppress the short-channel effects and the hot-carrier effects, and simultaneously reduce the off-state current. It is also revealed that subthreshold current is a slight function of doping concentration of overlapped region, while work-function of gate electrode has a strong influence on subthreshold current. The accuracy of the analytical model is verified by its good agreement with the three-dimensional numerical device simulator ISE.