Analytical modeling of asymmetric HALO-doped surrounding-gate MOSFET with gate overlapped lightly-doped drain | Zendy

Cong Li | Zendy; Yiqi Zhuang | Zendy; Ru Han | Zendy; Zhang Li | Zendy; Bao Jun-Lin | Zendy

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Analytical modeling of asymmetric HALO-doped surrounding-gate MOSFET with gate overlapped lightly-doped drain

Author(s) -

Cong Li,

Yiqi Zhuang,

Ru Han,

Zhang Li,

Bao Jun-Lin

Publication year - 2012

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.61.078504

Subject(s) - subthreshold conduction , doping , subthreshold slope , mosfet , halo , work function , materials science , optoelectronics , current (fluid) , threshold voltage , metal gate , voltage , condensed matter physics , gate oxide , nanotechnology , physics , transistor , quantum mechanics , layer (electronics) , galaxy , thermodynamics

A novel asymmetric HALO-doped surrounding-gate MOSFET with gate overlapped lightly-doped drain is presented. The performance of the new structure is studied by developing physics-based analytical models for surface potential, threshold voltage, and subthreshold current. It is found that the new structure can effectively suppress the short-channel effects and the hot-carrier effects, and simultaneously reduce the off-state current. It is also revealed that subthreshold current is a slight function of doping concentration of overlapped region, while work-function of gate electrode has a strong influence on subthreshold current. The accuracy of the analytical model is verified by its good agreement with the three-dimensional numerical device simulator ISE.

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