Open AccessStudy of electron density of nanostructure metal Tm
Author(s) -
Bingzhe Hou,
Fengyan Liu,
Bin Jiao,
Ming Yue
Publication year - 2012
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.61.077302
Subject(s) - materials science , density of states , electron density , condensed matter physics , electron , metal , semiconductor , fermi level , conductance , hall effect , nanostructure , analytical chemistry (journal) , electrical resistivity and conductivity , nanotechnology , optoelectronics , physics , chemistry , quantum mechanics , metallurgy , chromatography
Electron density is an important parameter for the macroscopic properties of metal. The reflectance spectrum measurement and the Hall Effect measurement are basic experiments for obtaining electron density and carrier density. Two samples (sample 1:100 nm, sample 2:10 nm) of nanostructure block rare earth metal Tm are studied. Their reflectivity spectra show that the surface reflection of Tm metal possess metallic optical properties in a region of infrared-ultraviolet, the electronic densities np of 6s band are 2.434 1028/m3 and 1.7011028/m3 similar to that of alkali. The carriers measured by Hall Effect experiment are of cavity tipe in the two samples, and the carrier densities nH are 8.0321024/m3 and 7.6791024/m3 respectively. They are only states near the Fermi surface. In addition, the conductance of Tm block is three orders of magnitude higher than one of semiconductor. The grain nanostructurization makes electronic density np, conductance , and carrier density nH decrease, but Hall coefficient RH increase.