Open AccessCharacterization of the p-type ZnO solid solution by doping Li under high pressure
Author(s) -
Qin Jie-Ming,
Lu Tian,
Dayong Jiang,
Shang Gao,
Junming Zhao,
Liang Jian-Cheng
Publication year - 2012
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.61.070702
Subject(s) - materials science , doping , acceptor , solid solution , electrical resistivity and conductivity , sintering , atom (system on chip) , conductivity , analytical chemistry (journal) , chemistry , optoelectronics , condensed matter physics , metallurgy , organic chemistry , electrical engineering , physics , engineering , computer science , embedded system
In this paper, stable Li-doped ZnO solid solution (ZnO: Li) is successfully prepared by sintering the mixture of ZnO and Li2O powders under a pressure of 5 GPa and at temperatures between 1200 ℃ and 1500 ℃. It is found that the high pressure and temperature conditions have significant effects on the electrical conductivity and the structure of the ZnO solid solution. The best p-type ZnO doping 4.5 at.% Li with a resistivity of 3.1 10-1cm, carrier concentration of 3.3 1019cm-3, and mobility of 27.7 cm/Vs is achieved at 1500 ℃. The p-type conduction formed in ZnO is due to acceptor formed by one substitutional Li atom at Zn site, which has an acceptor level of 110 meV. Furthermore, the effects of pressure on formation and electrical properties of the p-type ZnO are discussed.