Open AccessGe-vacancy complexes in Ge-doped czochralski silicon crystal
Author(s) -
Tong Wu
Publication year - 2012
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.61.063101
Subject(s) - vacancy defect , castep , atom (system on chip) , materials science , silicon , doping , crystal (programming language) , crystallography , crystallographic defect , condensed matter physics , band gap , physics , chemistry , optoelectronics , computer science , programming language , embedded system
The first-principls theory is used to study the interaction between the Ge atom and the vacancies in Ge-doped czochralski silicon. The CASTEP calculation shows the stable structural model of Ge atom and one vacancy, two vacancies and three vacancies through the distance between the Ge atom and vacancy (or the vacancy centers) and the size of the area (or volume). The calculation shows that the Ge atom introduced into the GCZ Si crystal tends to accumulate with the vacancy and then seeds for the Ge-vacancy complexes.