Open AccessFabrication of In-Al codoped ZnO nanobunches photodetectors
Author(s) -
Yuan Ze,
Gao Hong,
Lingling Xu,
Tingting Chen,
Lang Ying
Publication year - 2012
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.61.057201
Subject(s) - wurtzite crystal structure , responsivity , photodetector , materials science , photoelectric effect , optoelectronics , fabrication , chemical vapor deposition , dark current , hexagonal crystal system , zinc , crystallography , metallurgy , medicine , chemistry , alternative medicine , pathology
High-density In-Al codoped ZnO (In, Al, ZnO) nanobunches are synthesized by using chemical vapor deposition method, which can be used to fabricate In, Al, ZnO nanobunches photodetectors. The ZnO nanobunches each have a hexagonal wurtzite structure. It is found that the average length of the nanobunches is 5 m. The photoconduction mechanism and a series of photoelectric characteristics are studied including I-V characteristic measured in dark and UV illumination, responsivity and response time. The results indicate the presence of an internal gain mechanism. The response time is less than 0.5 s and decay time is about 23 s, so the fabricated device can indeed be used for light detection.