Open AccessA semiempirical model for kink effect on the AlGaN/GaN high electron mobility transistor
Author(s) -
Jun Ma,
Xiaohua Ma,
Huilong Zhang,
Mengmeng Cao,
Kai Zhang,
Wenwen Li,
Xinwen Guo,
XinHua Liao,
Weiwei Chen,
Yue Hao
Publication year - 2012
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.61.047301
Subject(s) - transistor , materials science , impact ionization , electron , optoelectronics , voltage , electron mobility , ionization , condensed matter physics , physics , ion , quantum mechanics
Kink effect is analyzed in AlGaN/GaN devices primarily. A semiempirical model is given by analyzing the kink effect on AlGaN/GaN high electron mobility transistor and by considering the relationship between Vds,kink and gate voltage. Due to a little error between simulation results and measured data, this model can be used to identify the occurrence of kink effect and change in drain current. The analyses of experimental results and model simulation lead to a conclusion that impact ionization plays an important role in generating kink effect.