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Study of growth of [111]-oriented CdTe thin films by MBE
Author(s) -
Bingpo Zhang,
Chunfeng Cai,
Xing-Min Cai,
Huizhen Wu,
Miao Wang
Publication year - 2012
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.61.046802
Subject(s) - reflection high energy electron diffraction , cadmium telluride photovoltaics , materials science , molecular beam epitaxy , electron diffraction , thin film , epitaxy , substrate (aquarium) , characterization (materials science) , reflection (computer programming) , diffraction , transmission electron microscopy , optoelectronics , optics , crystallography , nanotechnology , chemistry , physics , oceanography , layer (electronics) , geology , computer science , programming language
In this study, CdTe(111) thin films were epitaxially grown on freshly cleaved BaF2 substrate using molecular beam epitaxy (MBE). In situ characterization of reflection high energy electron diffraction (RHEED) reveals the growth mode of transition from 2D to 3D. XRD analysis results verify the single crystalline property of the as-grown films. Theoretical method is adopted to fit the measured near infrared transmission spectrum, revealing a CdTe energy gap of 1.511 eV at room temperature.

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