Open AccessEffect of an asymmetry n-AlGaN layer on performance of dual-blue wavelength light-emitting diodes
Author(s) -
Yan Qi-Rong,
Yong Zhang,
Yan Qi-Ang,
Shi Pei-Pei,
Shuwen Zheng,
Qiao Niu,
Shuti Li,
Guanghan Fan
Publication year - 2012
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.61.036103
Subject(s) - optoelectronics , materials science , diode , light emitting diode , wavelength , electron , blueshift , quantum well , asymmetry , layer (electronics) , quantum efficiency , optics , physics , laser , photoluminescence , nanotechnology , quantum mechanics
The effect of an n-type AlGaN layer on the physical properties of dual-wavelength light-emitting diode (LED) is investigated numerically. The simulation results show that compared with the conventional p-type AlGaN electron-blocking layer (EBL), the n-type AlGaN layer can improve the distribution of electrons and holes more uniformly and realize the radiation balance between electrons and holes in the quantum wells, and further reduce the efficiency dro of dual-blue wavelength LED at high current. In addition, the spontaneous emission rate of two kinds of quantum wells can be adjusted through the control of Al composition. It can be found from the results that the emission spectrum of dual-blue wavelength LED is more stable at low current with an Al composition of 0.16, while the emission spectrum is more stable at high current with an Al composition of 0.12.