Open AccessGrowth mechanism of hydrogenated carbon films: molecular dynamics simulations of the effects of low energy CH radical
Author(s) -
Qing Song,
Ji Li,
Weilong Quan,
Lei Zhang,
Ming Tian,
Hongxuan Li,
Jianmin Chen
Publication year - 2012
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.61.030701
Subject(s) - adsorption , materials science , molecular dynamics , carbon fibers , diamond , growth rate , chemical physics , plasma enhanced chemical vapor deposition , chemical engineering , photochemistry , thin film , chemistry , nanotechnology , computational chemistry , composite material , composite number , engineering , geometry , mathematics
Molecular dynamics simulations are carried out to investigate the effect of low energy CH radical on the growth of hydrogenated carbon film. The results show that the adsorption rate of CH on clear diamond(111) is about 98%, while on hydrogenated diamond (111) the adsorption rate is lower than 1%. It indicates that the selective adsorption of low energy CH radical at the unsaturated surface C site is the dominated mechanism of the hydrogenated carbon film growth in PECVD.