Open AccessHydrogenated poly-crystalline silicon thin films deposited by inductively coupled plasma assisted pulsed dc twin magnetron sputtering
Author(s) -
Yuanjun Su,
Jun Xu,
Min Zhu,
Ping Fan,
Dong Chen
Publication year - 2012
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.61.028104
Subject(s) - materials science , thin film , inductively coupled plasma , sputter deposition , pulsed dc , analytical chemistry (journal) , crystallization , silicon , raman spectroscopy , fourier transform infrared spectroscopy , transmission electron microscopy , sputtering , plasma , optoelectronics , optics , nanotechnology , chemical engineering , chemistry , physics , quantum mechanics , chromatography , engineering
Hydrogenated poly-crystalline silicon thin films are deposited by inductively coupled plasma assisted pulsed dc twin magnetron sputtering at a temperature below 300 ℃. The samples are characterized by X-ray diffraction, Raman scattering, transmission electron microscopy, and Fourier transform infrared spectroscopy. The relationship between hydrogen dilution ratio and the characteristic of thin film is studied systematically. The mechanism of crystallization is discussed on the basis of the results of diagnosis of plasma by Langmuir probe and optical emission spectra.