Open AccessHigh stability and linear tuning wavelength tunable resonant cavity enhanced photo-detector grown on GaAs
Author(s) -
Jie Wang,
Qin Han,
Xiaohong Yang,
Haiqiao Ni,
JianJun He,
Xiuping Wang
Publication year - 2012
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.61.018502
Subject(s) - materials science , molecular beam epitaxy , wavelength , optoelectronics , detector , voltage , biasing , optics , quantum well , photodetector , epitaxy , physics , laser , nanotechnology , quantum mechanics , layer (electronics)
A wavelength tunable resonant cavity enhanced photo-detector grown on GaAs is fabricated. The quantum wells of In0.25Ga0.75As/GaAs in the active region are grown by molecular beam epitaxy. The peak of the response spectrum at 0 work bias is located at 1071 nm. When the tuning voltage rises from 0 V to 21 V, the peak shows a blue shift of 23 nm, reaching 1048 nm. Statistical results show that there is a stable accurate corresponding relation between the tuning voltage and the response peak. The relation is approximately linear when the tuning voltage is greater than 5 V. Some theoretical analysis is performed on the test results.