Open AccessBand shifts of Tm2O3 films epitaxially grown on Si substrates
Author(s) -
Jianjun Wang,
Zebo Fang,
Ting Ji,
Zhu Yan-Yan,
Wei Ren,
Zhijiao Zhang
Publication year - 2012
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.61.017702
Subject(s) - molecular beam epitaxy , epitaxy , x ray photoelectron spectroscopy , valence (chemistry) , materials science , valence band , conduction band , band gap , dielectric , permittivity , analytical chemistry (journal) , optoelectronics , chemistry , nuclear magnetic resonance , physics , nanotechnology , electron , layer (electronics) , quantum mechanics , organic chemistry , chromatography
The single crystalline Tm2O3 films are deposited on Si(001) substrates by molecular beam epitaxy, by using x-ray photoelectron spectroscopy, the valence and the conduction-band shifts of Tm2O3 to Si are obtained to be 3.1 0.2 eV and 1.9 0.3 eV, respectively. The energy gap of Er2O3 is determined to be 6.1 0.2 eV. The results of the study show that the Tm2O3 could be a promising candidate for high-k gate dielectrics.