Open AccessStudy of modeling for hetero-materiel gate fully depleted SSDOI MOSFET
Author(s) -
Lei Cao,
Hongxia Liu,
Guanyu Wang
Publication year - 2012
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.61.017105
Subject(s) - silicon on insulator , materials science , mosfet , poisson's equation , optoelectronics , electric field , short channel effect , voltage , silicon , computer science , transistor , electrical engineering , physics , engineering , quantum mechanics
In this paper,we propose a new device structure called HMG SSDOI (hetero-materiel gate strained Si directly on insulator), which combines the advantages of strained-silicon and hetero-material gate technology. By solving 2D Poisson's equation, we present models of the surface potential, surface electric field and threshold voltage for the new structure. These models take into account the effects of the gate length, the work function and the energy band. ISE TCAD is also used to simulate the performance of new device structure. The comparison results of model calculation and mathematic simulation show that the new structure of HMG SSDOI can enhance the carrier transport efficiency and suppress short channel effect, drain induction barrier lower and hot carrier effect, which improves device performance greatly.