Open AccessStudy of the grain size effects on electrical resistivity model for ultrathin (10-50 nm) Cu films
Author(s) -
王宁,
董刚,
杨银堂,
陈斌,
王凤娟,
Zhang Shao Yan
Publication year - 2012
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.61.016802
Subject(s) - grain size , materials science , electrical resistivity and conductivity , scattering , grain boundary , condensed matter physics , range (aeronautics) , metal , composite material , metallurgy , optics , microstructure , physics , quantum mechanics
A relation between grain size and metal film is given by combining the Marom model with experiment data. Based on available theory model, taking into account the surface scattering, boundary scattering and grain size effect, an analytical resistivity model is presented for the 1050 nm thick Cu films. In particular, within a range of 1020 nm, the findings show that the proposed model with consideration of grain size effects is in good agreement with experimental results. Compared with Lim, Wang and Marom' models, the proposed method can reduce the relative standard deviations by 74.24%, 54.85% and 78.29%, respectively.