Fabrication and spectra-measurement of high Q photonic crystal cavity on silicon slabs | Zendy

Zhou Chang-Zhu | Zendy; Wang Chen | Zendy; Li Zhiyuan | Zendy

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Fabrication and spectra-measurement of high Q photonic crystal cavity on silicon slabs

Author(s) -

Zhou Chang-Zhu,

Wang Chen,

Li Zhiyuan

Publication year - 2012

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.61.014214

Subject(s) - electron beam lithography , silicon on insulator , photonic crystal , finite difference time domain method , inductively coupled plasma , materials science , fabrication , lithography , optics , silicon , spectral line , optoelectronics , plasma , physics , resist , nanotechnology , quantum mechanics , medicine , alternative medicine , pathology , layer (electronics)

We fabricate a high Q photonic crystal cavity on the top of SOI (silicon on insulator) with EBL (electron beam lithography) and ICP (inductively coupled plasma). The value of Q can reach 7 104. It provides basic condition for the following experiments, for example for the study of interaction between light and substance. The high Q cavity also provides good circumstance for the quantum information. The theoretical result of the value of Q is 1.2105 from FDTD (finite difference time domain) simulation.

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