Open AccessFabrication and spectra-measurement of high Q photonic crystal cavity on silicon slabs
Author(s) -
Chunlin Zhou,
Wang Chen,
Zhiyuan Li
Publication year - 2012
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.61.014214
Subject(s) - electron beam lithography , silicon on insulator , photonic crystal , finite difference time domain method , inductively coupled plasma , materials science , fabrication , lithography , optics , silicon , spectral line , optoelectronics , plasma , physics , resist , nanotechnology , quantum mechanics , medicine , alternative medicine , pathology , layer (electronics)
We fabricate a high Q photonic crystal cavity on the top of SOI (silicon on insulator) with EBL (electron beam lithography) and ICP (inductively coupled plasma). The value of Q can reach 7 104. It provides basic condition for the following experiments, for example for the study of interaction between light and substance. The high Q cavity also provides good circumstance for the quantum information. The theoretical result of the value of Q is 1.2105 from FDTD (finite difference time domain) simulation.