Open AccessThermal stability of Si-doped glow discharge polymer films
Author(s) -
Ying Zhang,
Z. Y. He,
Ping Li,
Jing Yan
Publication year - 2011
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.60.126501
Subject(s) - tetramethylsilane , glow discharge , materials science , x ray photoelectron spectroscopy , thermal stability , analytical chemistry (journal) , fourier transform infrared spectroscopy , polymer , doping , volumetric flow rate , polymerization , thermogravimetric analysis , composite material , chemical engineering , plasma , chemistry , optoelectronics , thermodynamics , organic chemistry , physics , quantum mechanics , engineering
The Si-doped glow discharge polymer (Si-GDP) films are deposited by glow discharge polymerization technology at different tetramethylsilane (TMS) flows. The chemical structure, the composition and the thermal stabilities of Si-GDP films are analyzed by the Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and thermal gravimetric analysis. The results show that the Si content increases from 0 to 16.62%, when the flow of TMS changes from 0 to 0.06 cm3/min. The relative content of SiC, SiH, SiO, SiCH3 increases with TMS flow rate increaseing. As TMS flow increases, the thermal stability of Si-GDP film becomes good.