Thermal stability of Si-doped glow discharge polymer films | Zendy

Ying Zhang | Zendy; Zhibing He | Zendy; Ping Li | Zendy; Jiancheng Yan | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Thermal stability of Si-doped glow discharge polymer films

Author(s) -

Ying Zhang,

Zhibing He,

Ping Li,

Jiancheng Yan

Publication year - 2011

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.60.126501

Subject(s) - tetramethylsilane , glow discharge , materials science , x ray photoelectron spectroscopy , thermal stability , analytical chemistry (journal) , fourier transform infrared spectroscopy , polymer , doping , volumetric flow rate , polymerization , thermogravimetric analysis , composite material , chemical engineering , plasma , chemistry , optoelectronics , thermodynamics , organic chemistry , physics , quantum mechanics , engineering

The Si-doped glow discharge polymer (Si-GDP) films are deposited by glow discharge polymerization technology at different tetramethylsilane (TMS) flows. The chemical structure, the composition and the thermal stabilities of Si-GDP films are analyzed by the Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and thermal gravimetric analysis. The results show that the Si content increases from 0 to 16.62%, when the flow of TMS changes from 0 to 0.06 cm3/min. The relative content of SiC, SiH, SiO, SiCH3 increases with TMS flow rate increaseing. As TMS flow increases, the thermal stability of Si-GDP film becomes good.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research