Open AccessElectrical and optical properties of Cu-Al-O thin films sputtered using non-stoichiometric target
Author(s) -
潘佳奇,
朱承泉,
李育仁,
兰伟,
苏庆,
刘雪芹,
谢二庆
Publication year - 2011
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.60.117307
Subject(s) - materials science , thin film , substrate (aquarium) , sputtering , crystallite , semiconductor , band gap , electrical resistivity and conductivity , sputter deposition , atmospheric temperature range , stoichiometry , optoelectronics , analytical chemistry (journal) , nanotechnology , metallurgy , chemistry , thermodynamics , oceanography , physics , engineering , chromatography , electrical engineering , geology
Taking account difference in sputtering rate between Cu and Al, we use a polycrystalline CuAlO2 target with a ratio between Cu and Al being 0.9 ∶1 to prepare the Cu-Al-O film by RF magnetron sputtering. The electrical and the optical properties of the thin film are influenced by the temperature of the substrate. When the substrate temperature is around 500 ℃, the film has a good transmission of 70% in the range of the visible light. Calculated by the fitted formula, the direct band gap is 3.52 eV,and it is in good agreement with the theoretical value. Near room temperature, the thin film conforms to the semiconductor thermal activation mechanism, when the substrate temperature is about 500 ℃, the film conductivity reaches 2.4810-3 Scm-1.