Open AccessTotal ionizing dose effect of 0.18 m nMOSFETs
Author(s) -
Zhangli Liu,
Zhiyuan Hu,
Zhengxuan Zhang,
Hua Shao,
Bingxu Ning,
Dawei Bi,
Ming Chen,
Shichang Zou
Publication year - 2011
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.60.116103
Subject(s) - shallow trench isolation , materials science , transconductance , subthreshold conduction , trench , optoelectronics , threshold voltage , subthreshold slope , leakage (economics) , mosfet , gate oxide , cmos , irradiation , radiation , trapping , voltage , electrical engineering , transistor , optics , physics , nanotechnology , ecology , engineering , layer (electronics) , biology , nuclear physics , economics , macroeconomics
A 0.18 m MOSFET with shallow trench isolation is exposed to a -ray radiation. The parameters such as off-state leakage current, threshold voltage, transconductance, gate leakage current, and subthreshold slope are analyzed for pre- and post-irradiation. By introducing constant sheet charges at the shallow trench isolation oxide sidewall, good agreement between 3D simulation and experiment result is demonstrated. We believe that the thin gate oxide is insensitive to radiation, and the radiation induced charge trapping in the shallow trench isolation still leads to macroscopic effects such as drain-to-source leakage current, ultimately limiting the tolerance of CMOS circuits.