Open AccessResearch on quantum efficient fitting and structure of high performance transmission-mode GaAs photocathode
Author(s) -
Jianhua Zhao,
Yijun Zhang,
Benkang Chang,
Xiong Ya-Juan,
Junju Zhang,
Feng Shi,
Hansong Cheng,
Dongxu Cui
Publication year - 2011
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.60.107802
Subject(s) - photocathode , materials science , transmission (telecommunications) , layer (electronics) , mode (computer interface) , optoelectronics , optics , physics , telecommunications , nanotechnology , computer science , quantum mechanics , operating system , electron
To explore the structural feature of high performance transmission-mode GaAs photocathode, the optical properties and shortwave limitation for the transmission-mode quantum efficient formula is modified. By using the modified formula, a high quantum efficient (43%) curve of ITT is well fitted. A series of structural parameters is obtained with in a relative error less than 5%, which indicates that the thickness of the Ga1-xAlxAs window layer is 0.30.5 m, the Al mole value is 0.7, and the thickness of the GaAs active layer is 1.11.4 m. In addition, an optimized structure for the uniform-doping transmission-mode GaAs photocathode is suggested based on the fitted results. When the thickness of the Ga1-xAlxAs (x=0.7) layer and the GaAs layer are 0.4 m and 1.11.5 m respectively, the integral sensitivity can exceed 2350 A/lm.