Power characteristics of SiC bipolar-mode JFET | Zendy

Zhang Lin | Zendy; Fei Yang | Zendy; Xiao Jian | Zendy; Gu Wenping | Zendy; Qiu Yan-Zhang | Zendy

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Power characteristics of SiC bipolar-mode JFET

Author(s) -

Zhang Lin,

Fei Yang,

Xiao Jian,

Gu Wenping,

Qiu Yan-Zhang

Publication year - 2011

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.60.107304

Subject(s) - jfet , materials science , resistor , mode (computer interface) , optoelectronics , bipolar junction transistor , power (physics) , silicon carbide , state (computer science) , transistor , field effect transistor , computer science , electrical engineering , voltage , physics , quantum mechanics , algorithm , metallurgy , engineering , operating system

The operational mechanism of normally-off type bipolar-mode SiC junction field effect transistor (BJFET) is studied by using a two-dimensional numerical model. Compared with the unipolar-mode SiC JFET, the bipolar-mode can reduce the on-state resistor of the SiC JFET effectively and compromise between the on-state and off-state characteristic of the device. The simulation resluts also show that switching time of BJFET increases remarkably.

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