Open AccessPower characteristics of SiC bipolar-mode JFET
Author(s) -
Lin Zhang,
Fei Yang,
Jianhua Xiao,
Gu Wen-Ping,
Qiu Yan-Zhang
Publication year - 2011
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.60.107304
Subject(s) - jfet , materials science , resistor , mode (computer interface) , optoelectronics , bipolar junction transistor , power (physics) , silicon carbide , state (computer science) , transistor , field effect transistor , computer science , electrical engineering , voltage , physics , quantum mechanics , algorithm , metallurgy , engineering , operating system
The operational mechanism of normally-off type bipolar-mode SiC junction field effect transistor (BJFET) is studied by using a two-dimensional numerical model. Compared with the unipolar-mode SiC JFET, the bipolar-mode can reduce the on-state resistor of the SiC JFET effectively and compromise between the on-state and off-state characteristic of the device. The simulation resluts also show that switching time of BJFET increases remarkably.