Open AccessQualitative analysis of excess noise in nanoscale MOSFET
Author(s) -
Tang Dong-He,
Lan Du,
Tinglan Wang,
Hua Chen,
WenHao Chen
Publication year - 2011
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.60.107201
Subject(s) - shot noise , mesoscopic physics , noise (video) , mosfet , burst noise , flicker noise , nanoscopic scale , noise generator , materials science , physics , statistical physics , optoelectronics , noise reduction , noise figure , condensed matter physics , noise measurement , acoustics , computer science , nanotechnology , noise floor , optics , quantum mechanics , transistor , cmos , voltage , artificial intelligence , image (mathematics) , amplifier , detector
Recent experiment indicates that shot noise is the dominant excess noise in nanoscale MOSFET. However the early research reported that no shot noise was observed in MOSFET, and thermal noise was the excess noise in short channel MOSFET. Based on the device current model, we derive the conversion conditions for the dominant component of excess noise shifting from thermal noise to shot noise. According to the conversion conditions, the prediction of the noise performance of nanoscale MOSFET is given, and the results coincide with experimental phenomena, simulation data and conclusion of mesoscopic shot noise, which has been reported in the article.