Open AccessManipulations of properties of the W-line emitting from the Si+ Self-ion-implanted Si thin films on insulated oxide layer
Author(s) -
Chong Wang,
Yang Yu,
Ruidong Yang,
Liang Li,
Wei Dong,
Jin Ying-Xia,
Jinxiao Bao
Publication year - 2011
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.60.106104
Subject(s) - materials science , photoluminescence , annealing (glass) , luminescence , wafer , ion , silicon , spectral line , oxide , optoelectronics , spectroscopy , thin film , analytical chemistry (journal) , nanotechnology , composite material , chemistry , physics , chromatography , quantum mechanics , astronomy , metallurgy
The Si+ self-ion-implanted and annealing experiments are conducted on the Si film based on the silicon-on-insulator wafers. The photoluminescence (PL) spectroscopy is used to investigate the luminescence properties of these Si film samples. Plentiful optical structures are observed in the PL spectra, including the D1, D2, D3, X, and the sharp W lines. By comparing the normalized PL intensities recorded by the same spectral experiments, we obtain the optimum self-ion-implanted and thermal annealing parameters. In addition, the defect origins and optical properties of the series of the D peaks and W line are well discussed.