Open AccessThreshold voltage degradation mechanism of SOI SONOS EEPROM under total-dose irradiation
Author(s) -
李蕾蕾,
于宗光,
肖志强,
周昕杰
Publication year - 2011
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.60.098502
Subject(s) - eeprom , threshold voltage , degradation (telecommunications) , materials science , optoelectronics , irradiation , silicon on insulator , mechanism (biology) , voltage , electrical engineering , computer science , transistor , silicon , computer hardware , telecommunications , physics , quantum mechanics , nuclear physics , engineering
Threshold voltage drift is one of the most important characteristics of device degradation. Based on the research of threshold drifts of the front and the back gate of SOI SONOS EEPROM, device degradation is studied in irradiation environment. Physical mechanism of threshold drifts is analyzed through physical band and mobile carrier analysis. And measures to improve device performance are proposed.