Threshold voltage degradation mechanism of SOI SONOS EEPROM under total-dose irradiation | Zendy

Zongguang Yu | Zendy; Xiao Zhiqiang | Zendy; Xinjie Zhou | Zendy; Leilei Li | Zendy

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Threshold voltage degradation mechanism of SOI SONOS EEPROM under total-dose irradiation

Author(s) -

Zongguang Yu,

Xiao Zhiqiang,

Xinjie Zhou,

Leilei Li

Publication year - 2011

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.60.098502

Subject(s) - eeprom , threshold voltage , degradation (telecommunications) , materials science , optoelectronics , irradiation , silicon on insulator , mechanism (biology) , voltage , electrical engineering , computer science , transistor , silicon , computer hardware , telecommunications , physics , quantum mechanics , nuclear physics , engineering

Threshold voltage drift is one of the most important characteristics of device degradation. Based on the research of threshold drifts of the front and the back gate of SOI SONOS EEPROM, device degradation is studied in irradiation environment. Physical mechanism of threshold drifts is analyzed through physical band and mobile carrier analysis. And measures to improve device performance are proposed.

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