Se ultrathin film growth on Si(100) substrate and its application in Ti/n-Si(100) ohmic contact | Zendy

Pan Shu-Wan | Zendy; Qi Dong-Feng | Zendy; Chen Songyan | Zendy; Li Cheng | Zendy; Wei Huang | Zendy; Hongkai Lai | Zendy

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Se ultrathin film growth on Si(100) substrate and its application in Ti/n-Si(100) ohmic contact

Author(s) -

Pan Shu-Wan,

Qi Dong-Feng,

Chen Songyan,

Li Cheng,

Wei Huang,

Hongkai Lai

Publication year - 2011

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.60.098108

Subject(s) - ohmic contact , materials science , substrate (aquarium) , molecular beam epitaxy , silicon , layer (electronics) , optoelectronics , contact resistance , thin film , selenium , epitaxy , nanotechnology , metallurgy , oceanography , geology

We have investigated the growth of thin selenium layer on Si (100) substrate by molecular beam epitaxy (MBE). By controlling the temperatures of the silicon substrate and the selenium source during growth, an ultrathin film of Se is successfully grown on the Si (100) substrate. As the Si (100) surface is passivated by the ultrathin film of Se, the electrical property of the Ti/n-Si (100) contact is shown to be ideally ohmic, with low resistance and relatively high thermal stability.

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