Open AccessSe ultrathin film growth on Si(100) substrate and its application in Ti/n-Si(100) ohmic contact
Author(s) -
潘书万,
亓东峰,
Chen Song Yan,
李成,
Huang Wei,
Lai Hong Kai
Publication year - 2011
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.60.098108
Subject(s) - ohmic contact , materials science , substrate (aquarium) , molecular beam epitaxy , silicon , layer (electronics) , optoelectronics , contact resistance , thin film , selenium , epitaxy , nanotechnology , metallurgy , oceanography , geology
We have investigated the growth of thin selenium layer on Si (100) substrate by molecular beam epitaxy (MBE). By controlling the temperatures of the silicon substrate and the selenium source during growth, an ultrathin film of Se is successfully grown on the Si (100) substrate. As the Si (100) surface is passivated by the ultrathin film of Se, the electrical property of the Ti/n-Si (100) contact is shown to be ideally ohmic, with low resistance and relatively high thermal stability.