Open AccessEvolution of Ge/Si quantum dots self-assembledgrown by ion beam sputtering
Author(s) -
Xue-gui Zhang,
Chong Wang,
Lu Zhi-Quan,
Jie Yang,
Liang Li,
Yang Yu
Publication year - 2011
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.60.096101
Subject(s) - quantum dot , materials science , sputtering , pyramid (geometry) , raman spectroscopy , ion , germanium , molecular physics , silicon , optoelectronics , nanotechnology , thin film , physics , optics , quantum mechanics
A series of Ge quantum dot samples with different Ge thickness is grown on n-Si(100) substrates by ion beam sputtering. Their morphology and structure are characterizated using AFM and Raman spectra, in which the evolution of the morphology, density, dimension, crystalline, and composition of the Ge quantum dots are discussed in detail. The results show that after the growth mode transiting from 2-D to 3-D, the shape of the Ge quantum dot changes directly into a dome shape and no pyramid dots are observed. Besides, with the increase of the Ge deposition, the density of the quantum dots increases to a maximum and then decreases, the crystalline becomes better, but the Ge/Si alloying processing is enhanced and the Ge composition decreases in quantum dots at the same time.