Open AccessResearch and development of GaN photocathode
Author(s) -
Biao Li,
Benkang Chang,
Youlong Xu,
Xiaojiao Du,
Yu Du,
Xiaohui Wang,
Junju Zhang
Publication year - 2011
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.60.088503
Subject(s) - photocathode , materials science , doping , optoelectronics , fabrication , electron , physics , nuclear physics , medicine , alternative medicine , pathology
Negative electron affinity GaN photocathode with greatly advanced photoelectricity performance is described. The research of GaN photocathode focuses on the three points, i. e. , quantum yield, electron energy distribution and surface model, in the last decade. The domestic research of GaN photocathode is still in its infancy, the basic theory is not established, and preparation technology is not mature. In this paper we review emission mechanism, material growth, surface cleaning, activation process optimization, varied-doping structure design and stability of GaN photocathode. The latest experimental results confirm that the fabrication technology of GaN photocathode is feasible.