Open AccessInfluence of interface traps of p-type metal-oxide-semiconductor field effect transistor on single event charge sharing collection
Author(s) -
Jianjun Chen,
Shuming Chen,
Liang Bin,
Biwei Liu,
Yaqing Chi,
Qin Jun-Rui,
Yuhui He
Publication year - 2011
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.60.086107
Subject(s) - materials science , mosfet , charge sharing , transistor , transient (computer programming) , optoelectronics , charge (physics) , field effect transistor , semiconductor , oxide , electrical engineering , physics , voltage , computer science , quantum mechanics , metallurgy , engineering , operating system
Due to negative bias temperature instability and hot carrier injection, p-type metal-oxide-semiconductor field effect transistor (MOSFET) will degrade with time, and the accumulation of interface traps is one major reason for the degradation. In this paper, the influence of the accumulation of pMOSFET interface traps on single event charge sharing collection between two adjacent pMOSFET is studied based on three-dimensional numerical simulations on a 130 nm bulk silicon complementary metal-oxide-semiconductor process, the results show that with the accumulated interface traps increasing, the charge sharing collection reducs for both the two pMOSFETs. The influence of the accumulation of pMOSFET interface traps on single event charge sharing induced multiple transient pulses between two adjacent inverters is also studied, the results show that the multiple transient pulses induced by the two pMOSFET charge sharings will be compressed, while multiple transient pulses induced by the two nMOSFET charge sharing will be broadened.