Open AccessTheoretical study of the effect of changes in the number of quantum wells of dual-wavelength LED
Author(s) -
Yunyan Zhang,
Fan Guan-Han
Publication year - 2011
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.60.078504
Subject(s) - quantum well , wavelength , physics , optoelectronics , quantum , quantum efficiency , materials science , optics , quantum mechanics , laser
A two-dimensional simulation of electrical and optical characteristics of the dual-wavelength LED with different numbers of quantum wells is conducted with APSYS software. The results show that the increase of the number of quantum wells will cause uneven distribution of hole concentrations. Therefore, the increase in the number of quantum wells cannot effectively enhance carrier recombination rate, internal quantum efficiency and luminous intensity. Furthermore, it will lead to the rising of threshold voltage and affect the energy conversion efficiency.