Open AccessFormation and properties of GeOI prepared by cyclic thermal oxidation and annealing processes
Author(s) -
Hu Mei-Jiao,
Li Cheng,
Xu Jian-Fang,
Hongkai Lai,
Songyan Chen
Publication year - 2011
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.60.078102
Subject(s) - photoluminescence , materials science , raman spectroscopy , annealing (glass) , wafer , chemical vapor deposition , optoelectronics , epitaxy , high resolution transmission electron microscopy , thermal oxidation , crystallization , analytical chemistry (journal) , silicon , nanotechnology , chemical engineering , layer (electronics) , optics , transmission electron microscopy , composite material , chemistry , physics , engineering , chromatography
Si0.82Ge0.18/SOI prepared by epitaxial growth of SiGe layer on SOI wafer in the ultra-high vacuum chemical vapor deposition is used to fabricate the SiGe on insulator (SGOI) substrate (0.24≤xGe≤1) by the cyclic oxidation and annealing processes. The structure and the optical properties of the SGOI with various Ge content are studied by employing HRTEM, Raman spectroscopy, and photoluminescence (PL) spectroscopy. The variations of Ge component and strain in the oxidation process are analyzed. High crystal quality Ge on insulator (GeOI), with a thickness of 11 nm, is obtained with a flat Ge/SiO2 interface. The direct band transition photoluminescence of the GeOI is observed at room temperature. The photoluminescence peak from GeOI is located at 1540 nm, and the PL intensity increases linearly with exciting power increasing. It is indicated that the formed GOI material has a high crystallization quality and is suitable for the applications in Ge optoelectronic and microelectronic devices.