Open AccessTransport mechanism of copper thin film oxidation by isotopic labeling
Author(s) -
Shixun Cao,
Jun Gong,
Cheng Zhong,
Jin Li,
Yiming Jiang
Publication year - 2011
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.60.078101
Subject(s) - copper , materials science , thin film , copper oxide , secondary ion mass spectrometry , diffusion , oxide , analytical chemistry (journal) , diffraction , deposition (geology) , chemical engineering , mechanism (biology) , ion , nanotechnology , chemistry , metallurgy , optics , chromatography , paleontology , philosophy , physics , organic chemistry , engineering , epistemology , sediment , biology , thermodynamics
In this paper, a new method is proposed to investigate the transport mechanism of copper thin film oxidation in water vapor using H162O/H182O isotopic labeling. Copper thin films are prepared on glass substrates by vacuum deposition. The structure of copper oxide film is analysed by X-ray diffraction (XRD). The distributions of16O and18O in the oxide film are analysed by secondary ion mass spectroscopy (SIMS). The results demonstrate that the transport mechanism of copper film oxidation is short-circuit diffusion mechanism.