Open AccessSpin injection in GaAs and giant Hall effect
Author(s) -
Zhiming Wang
Publication year - 2011
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.60.077203
Subject(s) - spintronics , condensed matter physics , materials science , spin (aerodynamics) , spin hall effect , hall effect , superlattice , semiconductor , electrical resistivity and conductivity , spin diffusion , magnetic semiconductor , spin valve , spin polarization , magnetic field , magnetoresistance , ferromagnetism , optoelectronics , physics , electron , thermodynamics , quantum mechanics
In spintronics, general spin injection is achieved by the superlattice, spin valve, tunnel junction, other typical method of spin injection is to dilute magnetic semiconductor such as: GaMnAs. In this paper, spin Fe particles are injected into the GaAs matrix by using the magnetron sputtering to form the granular film (GaAs)19Fe81, in which saturated Hall resistivity ρxys is shown to be 15 μΩ·cm at room temperature, which is about 2 orders larger than that of pure Fe. So the spin injection is successfully realized.