Spin injection in GaAs and giant Hall effect | Zendy

Zhiming Wang | Zendy

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Spin injection in GaAs and giant Hall effect

Author(s) -

Zhiming Wang

Publication year - 2011

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.60.077203

Subject(s) - spintronics , condensed matter physics , materials science , spin (aerodynamics) , spin hall effect , hall effect , superlattice , semiconductor , electrical resistivity and conductivity , spin diffusion , magnetic semiconductor , spin valve , spin polarization , magnetic field , magnetoresistance , ferromagnetism , optoelectronics , physics , electron , thermodynamics , quantum mechanics

In spintronics, general spin injection is achieved by the superlattice, spin valve, tunnel junction, other typical method of spin injection is to dilute magnetic semiconductor such as: GaMnAs. In this paper, spin Fe particles are injected into the GaAs matrix by using the magnetron sputtering to form the granular film (GaAs)19Fe81, in which saturated Hall resistivity ρxys is shown to be 15 μΩ·cm at room temperature, which is about 2 orders larger than that of pure Fe. So the spin injection is successfully realized.

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