Open AccessCurrent collapse effect, interfacial thermal resistance and work temperature for AlGaN/GaN HEMTs
Author(s) -
Jianxin Gu,
Qiang Wang,
Hong Li
Publication year - 2011
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.60.077107
Subject(s) - materials science , work (physics) , thermal , thermal resistance , current (fluid) , voltage , mechanics , conductance , optoelectronics , composite material , engineering physics , condensed matter physics , electrical engineering , thermodynamics , physics , engineering
The effects of operating temperature and the interfacial thermal resistance on device are researched by using a two-dimensional numerical simulator. A comparison between the simulated results and the experiment data demonstrates that hot electrons make a significant contribution to the negative differential output conductance which will increase with the increase of the work temperature under low drain voltage, and under upper drain voltage, the self-heating effect is an important factor to the current collapse which will become more serious with the work temperature and interfacial thermal resistance inereasing.