Open AccessModel of intrinsic carrier concentrationof [110]/(001)-uniaxial strained Si
Author(s) -
Guanyu Wang,
Jianli Ma,
Heming Zhang,
Xiaoyan Wang,
Bin Wang
Publication year - 2011
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.60.077105
Subject(s) - materials science , band gap , conduction band , condensed matter physics , electronic band structure , valence band , charge carrier , thermal conduction , stress (linguistics) , optoelectronics , physics , composite material , electron , quantum mechanics , linguistics , philosophy
In this paper, the effect of uniaxial stress along [110] direction on the energy-band structure parameters of (001)-bulk Si is discussed, thereby we investigate the equilibrium carrier concentration and the expressions of effective density of state (DOS) in conduction and valence band, which contain explicit physical significance. The model of intrinsic carrier concentration is proposed by combining the expressions of DOS and bandgap. The pro- posed method in this paper is also applicable to modeling the intrinsic carrier concentration under the action of uniaxial stress along an arbitrary direction, and provides some references for design, mode- ling and simulation of similar uniaxial strained Si devices.