Open AccessGrowth and device characteristics of nano-folding InGaN/GaNmultiple quantum well LED
Author(s) -
陈贵锋,
谭小动,
万尾甜,
沈俊,
郝秋艳,
唐成春,
朱建军,
刘宗顺,
赵德刚,
张书明
Publication year - 2011
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.60.076104
Subject(s) - materials science , nanopillar , optoelectronics , quantum confined stark effect , photoluminescence , wafer , nanodot , electroluminescence , indium gallium nitride , blueshift , quantum well , light emitting diode , nano , etching (microfabrication) , gallium nitride , nanotechnology , optics , nanostructure , layer (electronics) , laser , physics , composite material
GaN-based LED wafers with nano-folding InGaN/GaN multiple quantum wells (MQWs) are grown on n-GaN nanopillar array templates which are fabricated using self assembled Ni nanodots as etching mask. Photoluminescence (PL) spectra of the wafer show uniform light emission wavelength over the whole area of it. No blue shift of the main peak is observed in the electroluminescence (EL) spectra of the LED devices fabricated with the wafer as the injection current increases from 10 mA to 80 mA. This can be ascribed to the reduced quantum confinement Stark effect (QCSE) and the resulting less band gap tilted by strain relaxation in the nano-folded MQWs. The device shows an excellent rectifying behavior with a forward voltage of 4.6 V under 20 mA injection current.