Open AccessInvestigation of Ge quantum dots formation on SiO2 substratethrough annealing process
Author(s) -
Lei Zhang,
Hui Ye,
Huangfu You-Rui,
Ling Xu
Publication year - 2011
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.60.076103
Subject(s) - materials science , annealing (glass) , photoluminescence , quantum dot , raman spectroscopy , microstructure , condensed matter physics , optoelectronics , nanotechnology , composite material , optics , physics
Ge is deposited on an ultrathin SiO2 layer obtained chemically at room temperature, followed by annealing process. High density and uniform Ge quantum dots, rather than superdomes in traditional treatment, are obtained. Growth mechanism is suggested to explain the unusual microstructure dependence on annealing temperature. Raman spectrum is used to investigate the strain. Two peaks are found to be around 500 nm and 1350 nm respectively from the photoluminescence characterization.