Investigation of Ge quantum dots formation on SiO2 substratethrough annealing process | Zendy

Lei Zhang | Zendy; Hui Ye | Zendy; Huang-Fu You-Rui | Zendy; Xü Liu | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Investigation of Ge quantum dots formation on SiO2 substratethrough annealing process

Author(s) -

Lei Zhang,

Hui Ye,

Huang-Fu You-Rui,

Xü Liu

Publication year - 2011

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.60.076103

Subject(s) - materials science , annealing (glass) , photoluminescence , quantum dot , raman spectroscopy , microstructure , condensed matter physics , optoelectronics , nanotechnology , composite material , optics , physics

Ge is deposited on an ultrathin SiO2 layer obtained chemically at room temperature, followed by annealing process. High density and uniform Ge quantum dots, rather than superdomes in traditional treatment, are obtained. Growth mechanism is suggested to explain the unusual microstructure dependence on annealing temperature. Raman spectrum is used to investigate the strain. Two peaks are found to be around 500 nm and 1350 nm respectively from the photoluminescence characterization.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research