Open AccessStructural and optical properties of a-Si ∶H/SiO2 multiple quantum wells
Author(s) -
马小凤,
王懿喆,
周呈悦
Publication year - 2011
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.60.068102
Subject(s) - materials science , quantum well , plasma enhanced chemical vapor deposition , silicon , chemical vapor deposition , optoelectronics , annealing (glass) , fabrication , photoluminescence , absorption (acoustics) , absorption edge , optics , laser , composite material , physics , band gap , medicine , alternative medicine , pathology
a-Si ∶H/SiO2 multiple quantum wells (QWs) are fabricated by plasma enhanced chemical vapor deposition (PECVD) and subsequent different thermal annealing. Among them the annealed sample under 1100 ℃ in vacuum can be transferred into nc-Si:H/SiO2 QWs, and the size of formed nc-Si:H is controllable and it matches the thickness of a-Si ∶H sublayer. The optical absorptivity of a-Si ∶H/SiO2 QWs is compared with that of a-Si ∶H under the same fabrication condition, the former is higher evidently in the UV/Visible spectrum with the absorption edge blue-shifted, which shows that a-Si ∶H/SiO2 QWs has an obvious quantum confinement effect. So it is feasible to use a-Si ∶H/SiO2 QWs to enhance the efficiency of silicon solar cells. In addition, the formation of nc-Si:H/SiO2 QWs with controllable size built the basis for new-type nanocrystalline silicon solar cells.