Open AccessEffect of High-permeability FeCuNbSiB on magnetoelectric property of magnetostrictive/piezoelectric composite
Author(s) -
Lei Chen,
Ping Li,
Yumei Wen,
Wei Dong
Publication year - 2011
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.60.067501
Subject(s) - magnetostriction , materials science , terfenol d , magnetoelectric effect , piezoelectricity , composite number , permeability (electromagnetism) , composite material , magnetic field , saturation (graph theory) , voltage , piezoelectric coefficient , coupling coefficient of resonators , multiferroics , ferroelectricity , physics , optoelectronics , dielectric , genetics , mathematics , quantum mechanics , combinatorics , membrane , biology , resonator
A brand-new magnetostrictive/piezoelectric laminated composite is presented using the giant magnetostrictive Terfenol-D, piezoelectric PZT and high-permeability FeCuNbSiB. Since the high-permeability FeCuNbSiB changes the effective magnetic field in the Terfenol-D and the deformed FeCuNbSiB applies a stress to the Terfenol-D in an external magnetic field, thus the saturation magnetostrictive coefficient of Terfenol-D is enhanced, resulting in a higher magnetoelectric voltage output for the composite. Based on the equivalent magnetic charge theory, the effect of the FeCuNbSiB on the effective magnetic field in the Terfenol-D is analyzed, and the magnetostrictive coefficient of Terfenol-D and the theoretical formula of low-frequency magnetoelectric voltage coefficient are derived based on the nonlinear constitutive model of magnetostrictive material and the equivalent circuit method. The analytical results accord with the experiments qualitatively, and the magnetoelectric voltage of the composite is 1.3 times as high as that of the Terfenol-D/PZT-8H (MP) composite. The experimental results indicate that the thickness of FeCuNbSiB has a great influence on magnetoelectric property. The magnetoelectric voltage coefficient increases nearly linearly with the increase of the thickness of FeCuNbSIB until 180μm.