Rectifying behavior and photovoltaic effect in La0.88 Te0.12 MnO3/Si heterostructure | Zendy

Peng Chen | Zendy; Jin Ke-Xin | Zendy; Changle Chen | Zendy; Tan Xing-Yi | Zendy

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Rectifying behavior and photovoltaic effect in La0.88 Te0.12 MnO3/Si heterostructure

Author(s) -

Peng Chen,

Jin Ke-Xin,

Changle Chen,

Tan Xing-Yi

Publication year - 2011

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.60.067303

Subject(s) - heterojunction , materials science , surface photovoltage , photovoltaic effect , photovoltaic system , optoelectronics , pulsed laser deposition , laser , condensed matter physics , deposition (geology) , thin film , optics , nanotechnology , physics , electrical engineering , engineering , paleontology , quantum mechanics , sediment , spectroscopy , biology

The photovoltaic effect and the good rectifying behavior are observed in La0.88Te0.12MnO3(LTMO)/Si heterostructure fabricated by a pulsed laser deposition method. The photovoltage increases quickly to a maximum value at about 394 μs and then decreases gradually. The maximum photovoltage is about 13.7 mV at T = 80 K. The maximum photovoltage decreases with temperature increasing, which is attributed to the stronger thermal fluctuation. A nonlinear decrease of the maximum photovoltage in the photovoltages-temperature curve is observed, which is mainly caused by the change in the band structure of the LTMO layer due to the metal-insulator transition.

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