Open AccessRectifying behavior and photovoltaic effect in La0.88 Te0.12 MnO3/Si heterostructure
Author(s) -
陈鹏,
金克新,
陈长乐,
谭兴毅
Publication year - 2011
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.60.067303
Subject(s) - heterojunction , materials science , surface photovoltage , photovoltaic effect , photovoltaic system , optoelectronics , pulsed laser deposition , laser , condensed matter physics , deposition (geology) , thin film , optics , nanotechnology , physics , electrical engineering , engineering , paleontology , quantum mechanics , sediment , spectroscopy , biology
The photovoltaic effect and the good rectifying behavior are observed in La0.88Te0.12MnO3(LTMO)/Si heterostructure fabricated by a pulsed laser deposition method. The photovoltage increases quickly to a maximum value at about 394 μs and then decreases gradually. The maximum photovoltage is about 13.7 mV at T = 80 K. The maximum photovoltage decreases with temperature increasing, which is attributed to the stronger thermal fluctuation. A nonlinear decrease of the maximum photovoltage in the photovoltages-temperature curve is observed, which is mainly caused by the change in the band structure of the LTMO layer due to the metal-insulator transition.