Open AccessEffect of exponential-doping structure on quantum yield of transmission-mode GaAs photocathodes
Author(s) -
Yijun Zhang,
Jun Niu,
Jing Zhao,
JiJun Zou,
Benkang Chang
Publication year - 2011
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.60.067301
Subject(s) - photocathode , doping , quantum yield , exponential function , materials science , cathode , yield (engineering) , physics , optics , optoelectronics , electron , chemistry , quantum mechanics , mathematics , mathematical analysis , metallurgy , fluorescence
The quantum yield formulas for exponential-doping and uniform-doping transmission-mode GaAs photocathodes are modified by adding a shortwave constraint factor to the photoelectron generation function in a one-dimensional continuity equation. Based on the modified transmission-mode quantum yield formulas, the experimental exponential-doping and uniform-doping transmission-mode quantum yield curves are respectively fitted, and the fitted curves are consistent well with the experimental curves. In addition, the fitted cathode performance parameters indicate that as compared with the uniform-doping photocathode, the exponential-doping photocathode can obtain a higher cathode performance because of the built-in electric field. The exponential-doping structure can effectively increase the quantum yield of transmission-mode photocathode.