Open Access808nm vertical-cavity surface-emitting laser with large aperture
Author(s) -
Hao Yong-qin,
Yuan Feng,
Wang Fei,
Yan Chang-Ling,
Zhao Ying-jie,
Xiaohua Wang,
Yuxia Wang,
Huilin Jiang,
Xin Gao,
Baoxue Bo
Publication year - 2011
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.60.064201
Subject(s) - vertical cavity surface emitting laser , aperture (computer memory) , materials science , optics , laser , power (physics) , optoelectronics , semiconductor laser theory , enhanced data rates for gsm evolution , continuous wave , physics , telecommunications , computer science , acoustics , quantum mechanics
For the carriers-crowded effect in vertical-cavity surface-emitting laser (VCSEL), the injected current passes mainly through the edge of the circular active region, which results in nonuniformity of the output power density and annular facula with a poor central intensity, especially in large aperture VCSEL. How to restrain carriers-crowded effect becomes a technique problem to develop electrically pumped high power large aperture VCSEL. High power 808 nm VCSEL is demonstrated by introducing a novel structure. And an output power of 0.3 W is achieved at 1 A at room temperature under continuous wave operation.