Open AccessA two-dimensional subthreshold current model for fullydepleted strained-SOI MOSFET
Author(s) -
Shanshan Qin,
Heming Zhang,
Huiyong Hu,
Jiangtao Qu,
Guanyu Wang,
X. Qing,
Shu Kun Yu
Publication year - 2011
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.60.058501
Subject(s) - subthreshold conduction , mosfet , silicon on insulator , subthreshold slope , poisson's equation , current (fluid) , materials science , diffusion , doping , condensed matter physics , optoelectronics , computational physics , transistor , physics , silicon , quantum mechanics , voltage , thermodynamics
An analytical model for the subthreshold current of fully depleted strained -SOI MOSFET was developed by solving the two-dimensional (2D) Poisson equation and the conventional drift-diffusion theory. Model verification was carried out using the 2D device simulator ISE. Good agreement was obtained between the model's calculations and the simulated results. By analyzing the model, the dependence of current on the strained Si layer strain, thickness and doping was studied. This subthreshold current model provides valuable reference to the FD-SSOI MOSFET design.