A two-dimensional subthreshold current model for fullydepleted strained-SOI MOSFET | Zendy

Shanshan Qin | Zendy; Zhang He-Ming | Zendy; Huiyong Hu | Zendy; Jiangtao Qu | Zendy; Guanyu Wang | Zendy; Q. F. Xiao | Zendy; Shu Yu | Zendy

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A two-dimensional subthreshold current model for fullydepleted strained-SOI MOSFET

Author(s) -

Shanshan Qin,

Zhang He-Ming,

Huiyong Hu,

Jiangtao Qu,

Guanyu Wang,

Q. F. Xiao,

Shu Yu

Publication year - 2011

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.60.058501

Subject(s) - subthreshold conduction , mosfet , silicon on insulator , subthreshold slope , poisson's equation , current (fluid) , materials science , diffusion , doping , condensed matter physics , optoelectronics , computational physics , transistor , physics , silicon , quantum mechanics , voltage , thermodynamics

An analytical model for the subthreshold current of fully depleted strained -SOI MOSFET was developed by solving the two-dimensional (2D) Poisson equation and the conventional drift-diffusion theory. Model verification was carried out using the 2D device simulator ISE. Good agreement was obtained between the model's calculations and the simulated results. By analyzing the model, the dependence of current on the strained Si layer strain, thickness and doping was studied. This subthreshold current model provides valuable reference to the FD-SSOI MOSFET design.

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