Open AccessPreparation of graphene on different-polarity 6H-SiC substrates and the study of their electronic structures
Author(s) -
Kang Chao-Yang,
Jun Tang,
Limin Li,
Pan Hai-Bin,
Yan Wen-Sheng,
Ping Xu,
Wei Shi-Qiang,
Xiufang Chen,
Xiangang Xu
Publication year - 2011
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.60.047302
Subject(s) - materials science , epitaxy , raman spectroscopy , graphene , x ray photoelectron spectroscopy , low energy electron diffraction , annealing (glass) , substrate (aquarium) , electron diffraction , photoemission spectroscopy , diffraction , nanotechnology , chemical engineering , optics , layer (electronics) , composite material , physics , oceanography , engineering , geology
The epitaxial graphene (EG) layers are grown on Si-terminated 6H-SiC (0001) substrates and C-terminated 6H-SiC (000 1 - ) substrates separately by thermal annealing in an ultrahigh vacuum chamber. Low energy electron diffraction(LEED) and synchrotron radiation photoelectron spectroscopy(SRPES) are used to in-situ study the synthesis process, and the prepared samples are characterized by Raman spectrum, and near edge X-ray absorption fine structure(XANEX). The results show that we have successfully prepared high-quality EG layers on the two polar surfaces of 6H-SiC. The comparisons studies indicate that Si terminated EG is highly oriented while C terminated EG is anisotropic, and that the interface interaction similar to that of C-sp3 bond of diamond exists on the Si terminated EG, the interaction between the epitaxial film and substrate is stronger, while on the C terminated EG there is no such interaction, and the interaction between the epitaxial film and substrate is weaker.