Open AccessNoise as a characteriscic for current transmitting rateof optoelectronic coupled devicesfor ionization radiation damage
Author(s) -
Lin Li-Yan,
Lan Du,
Junlin Bao,
Liang He
Publication year - 2011
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.60.047202
Subject(s) - radiation , degradation (telecommunications) , noise (video) , irradiation , optoelectronics , radiation damage , ionization , materials science , photodiode , impact ionization , radiation effect , optics , physics , computer science , telecommunications , ion , quantum mechanics , artificial intelligence , image (mathematics) , nuclear physics
Based on the mechanism of ionization radiation damage in optoelectronic coupled devices (OCDs), the characteristic models of current transmitting rate (CTR) and 1/f noise are established. The results show that CTR degradation and noise increase are due to the increase of SiO2/Si interface defects at the collector junction and emit junction in phototransistor. The relationship between CTR degradation and noise change is established by the radiation dose. The correctnesses of characteristic models are validated in experiment. By the relationship between noise change and radiation dose, the high-dose radiation degradation can be predicted through the low-dose irradiation experiment. So noise can be used to evaluate the radiation tolerance of OCDs.