Open AccessDensities of states of strained Si in different crystal systems
Author(s) -
Jianjun Song,
Heming Zhang,
Xianying Dai,
Xuan Rong-Xi,
Huiyong Hu,
Guanyu Wang
Publication year - 2011
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.60.047106
Subject(s) - monoclinic crystal system , tetragonal crystal system , condensed matter physics , materials science , conduction band , trigonal crystal system , electron , microelectronics , electronic band structure , band gap , physics , crystal structure , nanotechnology , crystallography , quantum mechanics , chemistry
There has been aroused a lot of interest in the strained Si technology in the microelectronic field. Density of states (DOS) is an important physical parameter in strained Si materials. Based on the Kleinerts Variational perturbation (KP) theory related to stress, DOSs of electrons and holes near the bottom of conduction band and the top of valence band are obtained in tetragonal, rhombohedral and monoclinic strained Si grown from (001), (101) and (111) substrates respectively. It is found that their DOSs are obviously different from the ones of cubic unstrained Si, except DOSs of electrons near the bottom of conduction band in rhombohedral and monoclinic strained Si. The quantized model obtained can provide valuable references for understanding the strained Si material physics and developing the theoretical model of the other important physical parameters.