Open AccessThe experiential fit of the capacitance-voltage characteristicsof the AlGaN/AlN/GaN high electron mobility transistors
Author(s) -
王鑫华,
赵妙,
刘新宇,
蒲颜,
郑英奎,
魏珂
Publication year - 2011
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.60.047101
Subject(s) - transconductance , capacitance , high electron mobility transistor , materials science , transistor , sapphire , optoelectronics , electron , charge control , voltage , substrate (aquarium) , condensed matter physics , electrical engineering , power (physics) , physics , electrode , optics , thermodynamics , quantum mechanics , engineering , laser , oceanography , battery (electricity) , geology
This paper expresses the experiential relationship between Fermi level and the density of two-dimensional electron gas, based on the capacitance voltage (C-V) characteristics of the AlGaN/AlN/GaN high electron mobility transistor (HEMT) on sapphire substrate. The expression provides important references for establishing the device charge control model and simpliying the transconductance and capacitance. Parameter α is introduced for describing the ability for the two-dimensional potential well to restrict electrons, and we believe that the smaller the value of α, the stronger the restricting ability is. A coherent fitting effect, compared with the measurement, is obtained by making use of the experiential relationship said above.