Open AccessEffect of doping concentration in p+ deep well on charge sharing in 90nm CMOS technology
Author(s) -
Fanyu Liu,
Hengzhu Liu,
Biwei Liu,
Bin Liang,
Jianjun Chen
Publication year - 2011
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.60.046106
Subject(s) - pmos logic , nmos logic , doping , materials science , cmos , charge (physics) , optoelectronics , charge sharing , electrical engineering , transistor , physics , voltage , engineering , quantum mechanics
This paper deals with the effect of doping concentration in p+ deep well on charge sharing in 90nm dual well CMOS technology. TCAD simulation results show doping concentration in p+ deep well has a more significant effect on charge sharing in PMOS tube than in NMOS tube. By increasing doping concentration of p+ deep well appropriately, the charge sharing in PMOS can be restrained effectively, which is useful for reinforcing the charge sharing.